bc 807u apr-21-1999 1 pnp silicon transistor array for af input stages and driver applications high current gain low collector-emitter saturation voltage two ( galvanic) internal isolated transistors with good matching in one package vpw09197 1 2 3 4 5 6 eha07175 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package bc 807u 5bs 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sc-74 maximum ratings parameter value symbol unit collector-emitter voltage v v ceo 45 collector-base voltage v cbo 50 v ebo 5 emitter-base voltage dc collector current i c 500 ma peak collector current a 1 i cm i b 100 base current ma peak base current i bm 200 total power dissipation , t s = 115 c p tot 330 mw junction temperature t j c 150 storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 375 k/w junction - soldering point r thjs 105 k/w 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bc 807u apr-21-1999 2 electrical characteristics at t a =25c, unless otherwise specified parameter symbol unit values min. max. typ. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo 45 - v - collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo - 50 - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo - - 5 collector cutoff current v cb = 45 v, i e = 0 i cbo - na 100 - collector cutoff current v cb = 45 v, i e = 0 , t a = 150 c i cbo - - a 50 emitter cutoff current v eb = 4 v, i c = 0 i ebo - - na 100 400 - - h fe 160 100 dc current gain 1) i c = 100 ma, v ce = 1 v i c = 300 ma, v ce = 1 v 250 - - collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v cesat 0.7 v - - v besat - base-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma 1.2 ac characteristics 200 - mhz - f t transition frequency i c = 50 ma, v ce = 5 v, f = 20 mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 10 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 60 - - 1) pulse test: t < 300 s; d < 2%
bc 807u apr-21-1999 3 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 250 300 mw 400 p tot t s t a collector cutoff current i cbo = f ( t a ) v cb = 25v 0 10 ehp00213 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bc 807u apr-21-1999 4 base-emitter saturation voltage i c = f (v besat ), h fe = 10 0 10 ehp00214 besat v 2.0 v 4.0 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 1.0 3.0 ? c -50 25 ? c ? c 150 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 10 ehp00215 cesat v 0.4 v 0.8 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 0.2 0.6 -50 25 150 ? c ? c ? c transition frequency f t = f ( i c ) v ce = 5v 10 ehp00210 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz dc current gain h fe = f ( i c ) v ce = 1v 10 ehp00216 -1 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 ? c 100 5 25 ? c -50 ? c
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